Samsung planned to begin mass production on a 3 nm process node (3GAE) sometime in the first half of 2022, with the second-generation node following this week. This week, the company told investors it is on track to begin volume production in the coming weeks.
Samsung has announced the introduction of 3 nm GAAFET transistors in its multi-bridge-channel field-effect transistors.
The company cites a series of advantages over 7nm FinFET, as MBCFET can operate at voltages below 0.75 V. This allows for up to a 50 percent reduction in power consumption, 30 percent improved performance, and a 45 percent reduction in area.
The logic density might be similar to Intel 4 and TSMC''s 5N, but it might perform better owing to greater channels and reduced leakage current. The greatest unknown is the yield, which was a major concern with Samsung''s 4 nm process node that prompted businesses like Qualcomm to go to TSMC for future chips.
Other institutions such as Intel and TSMC are planning to adopt GAAFET in the coming years, and this could be their costliest transition yet. According to Samsung, MBCFET''s compatibility with FinFET manufacturing methods and equipment has not only increased development but also kept costs in check.
Samsung sold as many chips as it might perform during the first quarter of this year, and expects its DRAM and NAND products to continue to grow in the coming months. For the three months ended in March, the company received 4.1 trillion won ($11.2 billion) in operating profit, and more than half of that ($6.7 billion) came from the chip division.